| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to reduce fabricating time and cost by performing an etch process for guaranteeing a maximum surface area of the lower electrode of the capacitor only once, and to efficiently improve capacitance by eliminating the need to use an additional etcher. CONSTITUTION: An interlayer dielectric(32) having a contact hole is formed on a semiconductor substrate(31) having a cell transistor. A polysilicon layer is formed on the entire surface to fill the contact hole, and an ion implantation layer is formed in the surface of the polysilicon layer. A process for forming a polysilicon layer and a process for forming an ion implantation layer are repeated on the polysilicon layer. A capacitor lower electrode region is defined on the uppermost polysilicon layer to form a photoresist pattern layer. The polysilicon layer and the ion implantation layer which are alternatively stacked are patterned by using the photoresist pattern layer so that the polysilicon layer is anisotropically etched and the ion implantation layer is isotropically etched to form the capacitor lower electrode.
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