MASK PATTERN CORRECTING METHOD, PHOTOMASK, AND COMPUTER-READABLE RECORDING MEDIUM STORED WITH MASK PATTERN CORRECTING PROGRAM

摘要

PROBLEM TO BE SOLVED: To provide a correcting method for a mask pattern which can bring a pattern formed on a wafer through a photolithography process close to a design pattern. SOLUTION: Correction quantities, needed for the mask pattern, which are found by comparing the mask pattern with patterns on the wafer actually obtained through the photolithography process using the mask pattern are prepared by mask pattern density as correction data by the mask pattern density. Design pattern density for a correction object area on the mask is computed and correction data for the mask pattern density corresponding to the design pattern density are selected to correct design pattern data of the correction object area according to the data.