发明名称 |
Method of manufacturing a trench MOSFET using selective growth epitaxy |
摘要 |
A method of creating a thermally grown oxide of any thickness at the bottom of a silicon trench. A dielectric (e.g. oxide) pillar of a predetermined thickness is formed on a semiconductor substrate. A selective epitaxial growth (SEG) process is used to form an epitaxial layer around and over the oxide pillars. A trench is patterned and etched through the SEG layer and in alignment with the oxide pillar such that the trench terminates at the top of the oxide pillar.
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申请公布号 |
US6391699(B1) |
申请公布日期 |
2002.05.21 |
申请号 |
US20000586720 |
申请日期 |
2000.06.05 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
MADSON GORDON K.;SHARP JOELLE |
分类号 |
H01L21/20;H01L21/336;H01L21/8234;H01L29/423;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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