| 摘要 |
The dielectric porcelain of the present invention comprises a polycrystalline material of which a main component comprises oxides containing at least a rare earth element (Ln), Al, M (M represents Ca and/or Sr) and Ti as metal elements, wherein the thickness of a grain boundary layer is 20 nm or less, thereby achieving a high value of epsir, high Q factor and small absolute value of the temperature coefficient &tgr;f of resonant frequency in a high frequency region. Thus this dielectric porcelain is preferably used in dielectric resonators. |
