发明名称 |
Method for fabricating semiconductor memory device having ferroelectric layer |
摘要 |
A method for fabricating a semiconductor memory device is provided which can omit a fabricating step of removing a seed layer. The method for fabricating a semiconductor memory device includes the steps of a) providing a semiconductor structure, wherein the semiconductor structure has an insulating layer formed on a semiconductor substrate; b) forming a seed layer on an insulating layer covering the semiconductor substrate; c) forming a sacrifice layer on the seed layer; d) selectively etching the sacrifice layer to expose the seed layer, thereby defining an opening; e) forming a lower electrode layer on the seed layer disposed within the opening; f) removing the sacrifice layer to expose the lower electrode and a portion of the seed layer not covered by the lower electrode; g) oxidizing the exposed portion of the seed layer to form an insulating layer; and h) sequentially forming a ferroelectric layer and an upper electrode on the lower electrode.
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申请公布号 |
US6391660(B2) |
申请公布日期 |
2002.05.21 |
申请号 |
US20010891255 |
申请日期 |
2001.06.27 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KWEON SOON-YONG;YEOM SEUNG-JIN |
分类号 |
H01L21/8242;H01L21/02;H01L21/316;H01L21/8246;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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