发明名称 |
Method for forming polycrystalline silicon film |
摘要 |
In a method for forming a polycrystalline silicon (poly-Si) thin film on an inexpensive glass substrate, a cap film doped with a catalyst element is provided on an amorphous silicon (a-Si) film formed on the substrate. The a-Si film is transformed into the poly-Si film by irradiating an excimer laser beam on the a-Si film through the cap film. Thereafter, the cap film is removed from the poly-Si film together with the catalyst element precipitated therein.
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申请公布号 |
US6391747(B1) |
申请公布日期 |
2002.05.21 |
申请号 |
US20000498619 |
申请日期 |
2000.02.07 |
申请人 |
NEC CORPORATION |
发明人 |
OKUMURA HIROSHI;SERA KENJI |
分类号 |
B01J23/38;B01J23/42;B01J23/64;B01J23/68;B01J23/70;B01J23/755;B01J23/86;B01J23/89;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
B01J23/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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