| 摘要 |
A memory system including an array of memory cells, a programming voltage node for receiving a first programming voltage, a memory controller which controls memory programming operations on the array of memory cells, and voltage detection circuitry, operably coupled to the memory controller and the programming voltage node, with the voltage detection circuitry being configured to enable the memory controller to initiate one of the programming operations if the first programming voltage exceeds a first voltage level and to continue the programming operation once the programming operation has been initiated if the first programming voltage drops to a second voltage level and to terminate the programming operation once the programming operation has been initiated if the first programming voltage drops below the second voltage level, with the first voltage level being greater than the second voltage level. And a method of controlling the operation of a memory system which comprises an array of memory cells, the method comprising the steps of providing a first programming voltage, initiating a memory programming operation if the first programming voltage magnitude exceeds a first voltage level, continuing the initiated programming operation if the first programming voltage remains greater in magnitude than a second voltage level, with the first voltage level magnitude being greater in magnitude than the second voltage level, and terminating the initiated programming operation if the first programming voltage magnitude drops below the second voltage level.
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