发明名称 |
SEMICONDUCTOR CIRCUIT, DRIVING METHOD OF IT AND SEMICONDUCTOR ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To prevent generation of the overvoltage and reduction of the electromagnetic noise during the switching operation in a semiconductor circuit. SOLUTION: When a circuit is in a blocking state, the current and voltage characteristics of this device exhibits that the current flows slowly if the voltage is over a first voltage value V1 as well as under a second voltage value V2 and the current flows rapidly when the voltage is over the second voltage value V2. Accordingly, the energy stored in inductance in the circuit is consumed by a derivative resistance that the circuit comprises when the circuit transfers from the ON-state to the OFF-state, so that a bouncing voltage is restrained. As a result, generation of an electromagnetic noise and an overvoltage can be prevented.
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申请公布号 |
JP2002141418(A) |
申请公布日期 |
2002.05.17 |
申请号 |
JP20010268202 |
申请日期 |
2001.09.05 |
申请人 |
HITACHI LTD |
发明人 |
NAGASU MASAHIRO;KOBAYASHI HIDEO;MIYAZAKI HIDEKI;KIMURA ARATA;SAKANO JUNICHI;MORI MUTSUHIRO |
分类号 |
H01L27/04;H01L21/822;H01L29/739;H01L29/78;H01L29/861;(IPC1-7):H01L21/822 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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