| 摘要 |
PROBLEM TO BE SOLVED: To overcome difficulty in increasing a withstand voltage of a PNP transistor for power. SOLUTION: There are provided first, second, third and fourth collector regions 6, 7, 8, 9, in which the concentration of impurities is higher in this order. A peripheral portion 10b deeper than the central portion 10a is provided in a base region 10. The first, second, third and fourth collector regions 6, 7, 8, 9 are disposed between the base region 10 and a collector electrode 4 in this order. In a plane, the second and third collector regions 7, 8 are surrounded by the first collector region 6. The second and third collector regions 7, 8 are disposed inside the deepest portion of the base peripheral portion 10b.
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