发明名称 CONDUCTIVE DEPOSIT MONITOR, PLASMA PROCESSOR, AND PLASMA PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a conductive deposit monitor for monitoring a conductive deposit adhered on an inner wall of a vacuum chamber, a plasma processor, and a plasma processing method. SOLUTION: A resistive value between two of terminals 11 for resistance measurement buried in an inner wall of a vacuum chamber 1, by means of a resistance measuring instrument 13 to estimate the amount of conductive deposit adhered on the inner wall of the chamber.
申请公布号 JP2002141338(A) 申请公布日期 2002.05.17
申请号 JP20000335696 申请日期 2000.11.02
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YASHIRO YOICHIRO;OKUMURA TOMOHIRO
分类号 C23C16/44;C23C16/505;C23F4/00;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 C23C16/44
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