发明名称 |
CONDUCTIVE DEPOSIT MONITOR, PLASMA PROCESSOR, AND PLASMA PROCESSING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a conductive deposit monitor for monitoring a conductive deposit adhered on an inner wall of a vacuum chamber, a plasma processor, and a plasma processing method. SOLUTION: A resistive value between two of terminals 11 for resistance measurement buried in an inner wall of a vacuum chamber 1, by means of a resistance measuring instrument 13 to estimate the amount of conductive deposit adhered on the inner wall of the chamber.
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申请公布号 |
JP2002141338(A) |
申请公布日期 |
2002.05.17 |
申请号 |
JP20000335696 |
申请日期 |
2000.11.02 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
YASHIRO YOICHIRO;OKUMURA TOMOHIRO |
分类号 |
C23C16/44;C23C16/505;C23F4/00;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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