Wet cleaning of semiconductor wafers having a damascene structure involves using a cycle of steps using a combination of chemical compounds in protonated ultrapure water and ultrasonic treatment

摘要

Wet cleaning of the surface of a damascene micro-structure is carried out in a cycle of one or more steps. Each step involves using an aqueous solution comprising protonated ultrapure water and a combination of one or more chemical compounds, through which is passed acoustic waves of frequency above 1 MHz. The aqueous solution is supplied under pressure at an injection rate below 30l/minute. Preferred Features: After chemical mechanical polishing of a copper metallized damascene structure, the structure is cleaned in a cycle of steps. Each step is characterized by using the following cleaning compositions: (a) an aqueous solution comprising protonated ultrapure water (PPW), an anticorrosion agent (AA), and an organic complexing agent (type A) for contaminating particles; (b) an aqueous solution of PPW, AA, an organic complexing agent (type B) for contaminating particles, and a fluorine-containing compound (FC); (c) an aqueous solution of PPW, AA, FC, and an anionic surfactant (AS); (d) an aqueous solution of PPW, chelating agent (CA), AA, and FC; (e) an aqueous solution of PPW, CA, an organic compound (type C), and FC; and (f) an aqueous solution comprising PPW, AS and AA.