发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To facilitate transferring heat in a semiconductor chip to improve the heat dissipation of a semiconductor device. SOLUTION: The semiconductor device has a semiconductor chip having an interlayer dielectric formed on an element forming surface of a semiconductor substrate and connection terminals formed on the insulation film. The connection terminals of the chip are faced at and electrically connected to connection terminals of a wiring board. Power terminals of the semiconductor chip are connected to the semiconductor substrate linearly with metal wirings. Through the power wirings, heat generated from the semiconductor chip can be efficiently transferred to suppress the temperature rise of the chip. This improves the migration resistance and stabilizes the operation of the chip.
申请公布号 JP2002141436(A) 申请公布日期 2002.05.17
申请号 JP20000334160 申请日期 2000.11.01
申请人 HITACHI LTD 发明人 NOISSHIKI TAKAYUKI
分类号 H01L23/12;H01L21/60;H01L21/822;H01L27/04;(IPC1-7):H01L23/12 主分类号 H01L23/12
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