SILICON-ON-INSULATOR TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A silicon-on-insulator(SOI) transistor is provided to guarantee a silicide margin in a source/drain region of the SOI transistor, by making the source/drain region of the SOI transistor have the same structure as the source/drain region of a partially depleted SOI(PDSOI) transistor. CONSTITUTION: An insulation layer(310) is formed on a wafer(300). A semiconductor substrate(320) is formed on the insulation layer, having a trench. A gate electrode(340) is formed on the center of the trench, higher than the sidewall of the trench. A spacer(360) is formed on both sidewalls of the gate electrode, filling the trench. The source/drain region is formed under the spacer and in the exposed semiconductor substrate.