发明名称 |
Chemical mechanical planarization of metal substrates |
摘要 |
A method of polishing a wafer in a carrier by a polishing pad, controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or controlling a first polishing step with a PS to CS ratio in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.
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申请公布号 |
US2002058426(A1) |
申请公布日期 |
2002.05.16 |
申请号 |
US20010925209 |
申请日期 |
2001.08.09 |
申请人 |
MANDIGO GLENN C.;BARKER ROSS E.;LACK CRAIG D.;SULLIVAN IAN G.;GOLDBERG WENDY B. |
发明人 |
MANDIGO GLENN C.;BARKER ROSS E.;LACK CRAIG D.;SULLIVAN IAN G.;GOLDBERG WENDY B. |
分类号 |
B24B37/04;C09G1/02;C09K3/14;H01L21/304;(IPC1-7):H01L21/311;H01L21/31;H01L21/469 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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