| 摘要 |
PURPOSE: To provide a means that can generate indium ion beam in stable quantity. CONSTITUTION: This ion source 2 comprises a heating furnace 4, that generates steam 8 by heating a solid material 6 and a plasma-generating container 16, that generates plasma 24 by ionizing this steam 8 and generates an ion beam 30. As a solid material 6, indium fluoride that has been heated at a temperature of 600°C or higher and less than 1,170°C is used. Thereby, indium ion beam can be generated in stable quantity. As a solid material 6, In(OF)xF3-x (x is 1, 2 or 3) may be used.
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