METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A contact hole formation method is provided to improve a resolution and a uniformity of photoresist layers and to improve an aspect ration of contact holes. CONSTITUTION: An interlayer dielectric(22), a polysilicon layer, a cap oxide and an anti-reflective layer are sequentially formed on a metal wire(21). The anti-reflective layer and the cap oxide are sequentially etched to expose the polysilicon layer by using a photoresist pattern as a mask. After removing the anti-reflective layer, an HLD spacer is formed at both sidewalls of the cap oxide by HLD(High temperature Low pressure plasma Deposition). The exposed polysilicon is then etched by using the cap oxide and the HLD spacer. After removing the HLD spacer and the cap oxide, the interlayer dielectric(22) is then etched by using the resultant polysilicon pattern.