| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent a contact and a semiconductor substrate from being short-circuited by misalignment of a subsequent photolithography process, by using selective epitaxial growth(SEG) process. CONSTITUTION: An active region and an isolation region are defined on a semiconductor substrate(11). A predetermined substrate of the semiconductor substrate in the isolation region is etched to form a shallow trench isolation region, and an oxide layer is filled to form a field oxide layer(12). A gate(13) is patterned on the active region of the semiconductor substrate, and an insulation layer sidewall(14) is formed on the side surface of the gate. Impurity ions are implanted into the active region where the gate and the insulation layer sidewall is not formed so that a source/drain(15) is formed. An epitaxial layer(16) extending to cover a part of the field oxide layer is formed by using an SEG process on the exposed source/drain. An interlayer dielectric(17) is formed on the resultant structure. A part of the epitaxial layer is exposed by using a photolithography process to selectively etch the interlayer dielectric, and a conductive material is filled to form a contact(18).
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