发明名称 |
Apparatus and method for generating indium ion beam |
摘要 |
An ion source 2 has a heating furnace 4 for annealing a solid material 6 to generate a steam 8 and a plasma generator 16 for ionizing the steam 8 to generate a plasma 24. The ion source 2 is for generating ion beam. An indium trifluoride is used as said solid material which has been once heated at temperature in the range of 600° C. to lower than 1170° C., thereby enabling to generate the indium ion beam in a stable amount. For the solid material 6, In(OF)xF3-x (x is 1, 2 or 3) may be used.
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申请公布号 |
US2002056342(A1) |
申请公布日期 |
2002.05.16 |
申请号 |
US20010986624 |
申请日期 |
2001.11.09 |
申请人 |
NISSIN ELECTRIC CO., LTD. |
发明人 |
YAMASHITA TAKATOSHI |
分类号 |
C23C14/32;C22B4/00;C22B4/08;C22B58/00;C23C14/22;C23C14/24;H01J27/02;H01J37/08;(IPC1-7):C22B4/08 |
主分类号 |
C23C14/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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