NITRIDE SEMICONDUCTOR LUMINOUS ELEMENT AND OPTICAL DEVICE INCLUDING IT

摘要

A nitride semiconductor luminous element which is formed on a substrate and includes a luminous layer (106) containing a quantum well layer and a barrier layer in contact with this well layer, wherein the well layer is a nitride semiconductor containing Ga, N and an element X, the element X containing at least one element selected from among As, P and Sb with an atomic percentage X/(N+X) of up to 30%, and the barrier layer is a nitride semiconductor containing Ga, N and an element Y, the element Y containing at least one element selected from among As, P and Sb.