| 摘要 |
<p>A magnetic memory device capable of preventing complication of the structure of an amplifier (sense amplifier) and enabling high-speed reading is provided. In this magnetic memory device, a memory cell is formed by a pair of first and second storage elements (4a, 4b) exhibiting a ferromagnetic tunnel effect and a pair of first and second transistors (5a, 5b) while an amplifier (53) detects potential difference between a bit line (BL) and an inverted bit line (/BL) connected to the pair of first and second storage elements. Thus, data can be readily read. Further, the value of a small current flowing to the bit line may not be detected dissimilarly to a case of forming the memory cell by a storage element exhibiting a ferromagnetic tunnel effect and a transistor. Consequently, the structure of the amplifier is not complicated. Further, no amplifier having a complicated structure may be employed, whereby high-speed reading is enabled. <IMAGE></p> |
