| 摘要 |
PURPOSE: A method for fabricating a semiconductor is provided to prevent a pattern from being deteriorated in an interface between a dummy pattern and an exposure pattern on the side surface of a wafer after an etch process is performed. CONSTITUTION: The dummy pattern is formed on a wafer. Photoresist is coated on the wafer. An exposure process is performed regarding the photoresist coated on the wafer so that the photoresist is patterned to a predetermined pattern. A cleaning process is performed regarding the photoresist by the width of the side surface of the photoresist to eliminate. The exposure width(21) of the side surface of the wafer not affecting the dummy pattern is exposed to eliminate the photoresist not removed in the process for cleaning the photoresist of the wafer. A process for etching the exposed pattern on the wafer is additionally included.
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