Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same

摘要

A crucible 30, which has first member 31 and second cylindrical body 36, is disposed in a lower chamber. A pedestal 33 is disposed inside the first member 31, and a seed crystal 34 is fixed to the pedestal. A second heat insulator 52 is provided between an inlet conduit 50 and a crucible 30. A first heat insulator 51 is provided at a halfway portion of the inlet conduit 50. With these heat insulators, a temperature gradient occurs in the inlet conduit at a portion thereof that is closer to the crucible. A mixture gas is introduced into the crucible 30. The mixture gas is heated up gradually when passing through the inlet conduit 50 and is introduced into the crucible 30 to form SiC single crystals in high quality.