发明名称 |
Method for nondestructively reading memory cells of an MRAM memory |
摘要 |
A method for nondestructively reading memory cells of an MRAM memory, which includes steps of: determining a standard resistance of a memory cell at a voltage at which a resistance of the memory cell is independent of a stored content of the memory cell; determining an actual resistance of the memory cell at a voltage at which the resistance of the memory cell is dependent on the stored content of the memory cell; obtaining a normalized actual resistance of the memory cell by dividing the actual resistance by the standard resistance; obtaining a comparison result by comparing the normalized actual resistance with a reference value; and detecting the stored content of the memory cell dependent on the comparison result.
|
申请公布号 |
US6388917(B2) |
申请公布日期 |
2002.05.14 |
申请号 |
US20010915983 |
申请日期 |
2001.07.25 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HOFFMANN KURT;KOWARIK OSKAR |
分类号 |
G01R31/28;G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):G11C11/15 |
主分类号 |
G01R31/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|