| 发明名称 | Method for fabricating intermediate member of electronic element and method for fabricating electronic element | ||
| 摘要 | A method for fabricating an intermediate member of an electronic element, comprises: preparing a glass substrate as a support substrate having a first surface; forming a first inorganic film that contains silicon and has a second surface and a third surface opposite to the second surface, in such a manner that the first surface of the support substrate is in contact with the second surface of the first inorganic film; forming a first polyimide film containing fluorine on the third surface of the first inorganic film; and forming a second inorganic film containing silicon on the first polyimide film. | ||
| 申请公布号 | US9368750(B1) | 申请公布日期 | 2016.06.14 |
| 申请号 | US201514932897 | 申请日期 | 2015.11.04 |
| 申请人 | PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. | 发明人 | Isaji Yuka |
| 分类号 | H01L21/00;H01L21/84;H01L51/52;H01L51/56 | 主分类号 | H01L21/00 |
| 代理机构 | Greenblum & Bernstein, P.L.C. | 代理人 | Greenblum & Bernstein, P.L.C. |
| 主权项 | 1. A method for fabricating an intermediate member of an electronic element, comprising: preparing a glass substrate as a support substrate having a first surface; forming a first inorganic film that contains silicon and has a second surface and a third surface opposite to the second surface, in such a manner that the first surface of the support substrate is in contact with the second surface of the first inorganic film; forming a first polyimide film containing fluorine on the third surface of the first inorganic film; and forming a second inorganic film containing silicon on the first polyimide film. | ||
| 地址 | Osaka JP | ||