| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance semiconductor integrated circuit where standby current is reduced by preventing leakage current of the semiconductor integrated circuit device, for example, a memory cell of an SRAM. SOLUTION: A gate electrode G is formed on a semiconductor substrate 1, and an n+ type semiconductor region 17 (a source/drain region) is formed in the semiconductor substrate on both sides of this gate electrode, and then the source/drain region and an upper part of the gate electrode are sputter etched in the range of less than or equal to 2.5 nm from the surface, and then, in the same apparatus under a vacuum, a Co film is formed on the source/drain region, and a CoSi2 layer 19a is then formed by performing heat treatment. As a result, the leakage current of the memory cell can be prevented, and a low consumption current or a battery-operated semiconductor integrated circuit device can be applied. |
