| 摘要 |
<p>A point contact array applicable to an arithmetic circuit, a logic circuit, and memory device, in which the conductances between electrodes are electrically and reversibly controlled and point contacts are arranged. A circuit comprising point contacts each composed of a first electrode made of a mixture of conductive materials having ion-conductivity and electron-conductivity and a second electrode made of a conductive material is fabricated while controlling the conductances of the point contacts. The conductive material mixture is preferably Ag2S, Ag2Se, Cu2S, or Cu2Se. A semiconductor and an insulating material when they are interposed between electrodes are preferably crystals or amorphous bodies of GeSx, GeSex, GeTex, or WOx (0 < x < 100). A NOT circuit is composed of a device , which is an atomic switch composed of a two-terminal element, and comprises a first electrode made of a mixture of conductive materials having ion-conductivity and electron conductivity and a second electrode made of a conductive material and in which the conductance between electrodes can be controlled.</p> |
