| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable rewriting simultaneously many memory cells of plural banks and suppress power consumption at the time of read-out small, in a non-volatile memory cell in which boosted voltage generated in an internal power source circuit is used at the time of write-in, erasure, and read-out. SOLUTION: Power source circuits 13, 22 are provided corresponding to memory arrays 12, 21, the memory array 12 is coupled to the power source circuit 13 through a switch 15, also, the memory array 21 is coupled to the power source circuit 22 through a switch 24. Further, a switch 16 is inserted between the memory array 12 and a power source circuit 22, at the time of write-in, power source voltage is supplied to the memory arrays 12, 21 from the power source circuits 13, 22 respectively, at the time of read-out, power source voltage is supplied to the memory arrays 12, 21 from the power source circuit 22.</p> |
