| 摘要 |
PROBLEM TO BE SOLVED: To provide a horizontal-type insulated-gate field effect transistor that can recover power for restraining the power consumption of a display panel. SOLUTION: This horizontal-type insulated-gate field effect transistor has a second conductivity-type well region (2), formed on the surface of a first conductivity-type semiconductor substrate (1), a first conductivity-type source region formed in the well region (2), a source electrode (11) connected to the source region, a first conductivity-type drain region formed in the well region (2), a drain electrode (10) connected to the drain region, a gate-insulating film (9) that is formed on the well region (2) and extends over the source and drain regions, and a gate electrode (8) formed on the gate-insulating film (9). The drain electrode (10) is connected to the well region (2) at a portion, other than the drain region.
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