| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem where, related to a semiconductor device of bevel structure, a high breakdown-strength is hard to realize independent of the change in amount of negative charge of a protective film. SOLUTION: A transistor is formed into a bevel structure which comprises an N+ type first collector region 2, an N- type second collector region 3, a P- type first base region 4, a P+ type second base region 5, and emitter region 6. A step part 13 is provided below a side slop 12 of a semiconductor substrate 1. The N+ type first collector region 2 is so formed as to be enclosed with the second collector region 3 in top view. A distance L1 from a main surface 9 on the emitter region 6 side to the step part 13 is longer than a distance L2 from the main surface 9 to the first collector region 2.
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