发明名称 |
NON-VOLATILE MEMORY WITH SOURCE SIDE BORON IMPLANTATION |
摘要 |
One aspect of the present invention relates to a method of making a flash memory cell (32) involving the steps of providing a substrate (30) having a flash memory cell (32) thereon; forming a self-aligned source mask (48) over the substrate (30), the self aligned source mask (48) having openings (50) corresponding to source lines; implanting a source dopant of a first type (52) in the substrate (30) through the openings (50) in the self-aligned source mask (48) corresponding to source lines; removing the self-aligned source mask (48) from the substrate (30); cleaning the substrate (30); and implanting a medium dosage drain implant of a second type to form a source region (54) and a drain region (56) in the substrate (30) adjacent the flash memory cell (32). |
申请公布号 |
WO0237550(A1) |
申请公布日期 |
2002.05.10 |
申请号 |
WO2001US24677 |
申请日期 |
2001.08.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HE, YUE-SONG;HADDAD, SAMEER;THURGATE, TIMOTHY;CHANG, CHI |
分类号 |
H01L21/8247;H01L21/336;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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