发明名称 NON-VOLATILE MEMORY WITH SOURCE SIDE BORON IMPLANTATION
摘要 One aspect of the present invention relates to a method of making a flash memory cell (32) involving the steps of providing a substrate (30) having a flash memory cell (32) thereon; forming a self-aligned source mask (48) over the substrate (30), the self aligned source mask (48) having openings (50) corresponding to source lines; implanting a source dopant of a first type (52) in the substrate (30) through the openings (50) in the self-aligned source mask (48) corresponding to source lines; removing the self-aligned source mask (48) from the substrate (30); cleaning the substrate (30); and implanting a medium dosage drain implant of a second type to form a source region (54) and a drain region (56) in the substrate (30) adjacent the flash memory cell (32).
申请公布号 WO0237550(A1) 申请公布日期 2002.05.10
申请号 WO2001US24677 申请日期 2001.08.06
申请人 ADVANCED MICRO DEVICES, INC. 发明人 HE, YUE-SONG;HADDAD, SAMEER;THURGATE, TIMOTHY;CHANG, CHI
分类号 H01L21/8247;H01L21/336;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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