SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device suitable for a multi-layer, coping with a high frequency and having high reliability and its manufacturing method. SOLUTION: The semiconductor device 100 is provided with an electric insulator 101, an electrode pattern 102, and a semiconductor 103 and a penetration conductor 104 arranged in the inside of the electric insulator 101 and arranged on the electrode pattern 102. The end face of the penetration conductor 104 is exposed from the electric isolator 101 in the semiconductor device 100.