发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To solve such a problem that when a defective block is caused, manufacturing efficiency is reduced and it is hard to make surely a defective block detected after package a non-selection holding state. SOLUTION: A transistor 35 is connected to a decoding circuit 29 to which a block address signal is supplied in each block decoder 12. A block corresponding to this block decoder can be set to a non-selection holding state by turning off this transistor 35 in accordance with data latched by a latch circuit 36. Therefore, even when a defective block is detected by a burn-in test after packaging, this defective block can be set easily to a non-selective holding state.
申请公布号 JP2002133894(A) 申请公布日期 2002.05.10
申请号 JP20000330971 申请日期 2000.10.30
申请人 TOSHIBA CORP 发明人 HOSONO KOJI;NAKAMURA HIROSHI;IMAMIYA KENICHI
分类号 G06F12/16;G11C16/06;G11C29/00;G11C29/04 主分类号 G06F12/16
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