METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To resolve problems of degradation in wiring resistance characteristics and insulating characteristics due to the deterioration of the surface of an exposed metal wiring layer and an interlayer insulating film by reaction with gas components for forming the film in an excited state when forming a barrier film by a plasma CDV method. SOLUTION: The reaction of the surface of the metal wiring layer and the interlayer insulating film with the gas for forming the film is suppressed by forming the barrier film at a low temperature by means of a sputtering method.