FIELD EMISSION TYPE ELECTRON SOURCE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a low cost field emission type electron source having a large area and a manufacturing method therefor. SOLUTION: This cathode comprises, a conductive n-type silicon substrate 1, a strong field drift layer 6 consisting of an oxidized porous polycrystalline silicon layer which is formed on a main surface of the substrate 1, and a surface electrode 7 which is formed on a surface of the strong field drift layer 6. The strong field drift layer 6 is formed through oxidization of a porous polycrystalline silicon layer 4 which is formed through a process of an anode oxidizing treatment of a polycrystalline silicon layer 3. After making the porous polycrystalline silicon 4 absorb moisture, it is heated by applying an electric current to it. The porous polycrystalline silicon 4 is electrochemically oxidized through this process. Using a glass substrate and a conductive layer which is formed on a surface of the glass substrate as a conductive substrate, it is possible to construct a low cost conductive glass substrate having a low upper limit of enduring temperature.