| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for nondestructively reading memory cell of MRAM memory which does not take up a large space or time for each read process. SOLUTION: Resistance RA.RP of a memory cell are not influenced by contents of the memory cell in a voltage region U1, while the resistances RA.RP vary according to the cell contents in another voltage region U2. Accordingly, the resistances RA.RP (U2) can be normalized by the resistances RA.RP (U1), in order to compare the contents of the memory cell which are different from each other. As a result, the normalized reading signal of a specified memory cell is compared with the normalized reference signal of a reference cell described by '0' or '1', and the contents of the memory cell as '1' or '0' can be detected.
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