SEMICONDUCTOR LASER APPARATUS AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser apparatus with superior beam property in which a threshold electric current is low and deterioration of a temperature characteristic of current-light output characteristics is small. SOLUTION: A current block layer 22 of n-AlInP having a belt-shaped opening 24 is formed on a first clad layer 20. The first upper clad layer 20 and the current block layer 22 opposed to the opening 24 are covered with a buffer layer 26 of p-Al0.5Ga0.5As. A second upper clad layer 28 consisted of p-(Al0.7Ga0.3)0.5In0.5P is formed through the buffer layer 26. The occurrence of lattice defect in a crystalline layer growing up on a surface of the current block layer 22 that faces the opening 24 can be reduced.