| 摘要 |
PROBLEM TO BE SOLVED: To provide constitution of a semiconductor memory which can perform normally equalization of a data line even if external power source voltage supplied from the outside is made low voltage. SOLUTION: An equalizing circuit 8 has N channel MOS transistors M3, M4, M5 for setting the prescribed pre-charge voltage to a data line. H level voltage Vdd of a control signal DLEQ for turning on these N channel MOS transistors is set to a higher frequency than the sum of pre-charge voltage and threshold voltage of the transistor. A Vddb generating circuit 50 boosts external power source voltage ExVdd and sets voltage Vddb in a lower range than boosting voltage Vddb for activating a word line. |
