| 摘要 |
The present invention relates to a dual bit nonvolatile programmable read/write memory. In configuration, there is contained a semiconductor memory element that comprises a one conductivity type semiconductor substrate 21 in which a convex portion 24a having a pair of opposing side surfaces is provided, a pair of opposite conductivity type source/drain regions 23a, 23b formed on a surface of the semiconductor substrate 21 on both sides of the convex portion 24a, a first insulating film 22a for covering upper surface of the convex portion 24a, second insulating films 22 for covering the side surfaces of the convex portion 24a and the source/drain regions 23a, 23b, a pair of floating gates 27a, 27b 7provided on the side surface of the convex portion 24a to oppose to the side surfaces and the source/drain regions 23a, 23b via the second insulating films 22 respectively, third insulating films 29 formed on the floating gates 27a, 27b, and control gate 30a opposing to the upper surface of the convex portion 24a via the first insulating film 22 and opposing to the floating gates 27a, 27b via the third insulating films 29 respectively.
|
