发明名称 |
SLICING OF SINGLE-CRYSTAL FILMS USING ION IMPLANTATION |
摘要 |
A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The thin film may be detached by subjecting the crystal structure with the ion implanted damage layer to a rapid temperature increase without chemical etching. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures. Methods for enhancing the crystal slicing etch-rate are also disclosed.
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申请公布号 |
US2002053318(A1) |
申请公布日期 |
2002.05.09 |
申请号 |
US19990289169 |
申请日期 |
1999.04.09 |
申请人 |
LEVY MIGUEL;OSGOOD RICHARD M.;RADOJEVIC ANTONIJE M. |
发明人 |
LEVY MIGUEL;OSGOOD RICHARD M.;RADOJEVIC ANTONIJE M. |
分类号 |
C30B33/08;C23C14/48;C30B29/30;C30B31/22;C30B33/00;G02B6/13;G02F1/03;G02F1/09;G02F1/355;G02F1/37;H01L21/20;H01L21/265;H01L21/306;H01L21/762;(IPC1-7):C30B25/00;C30B1/00;C30B23/00;C30B28/12;C30B28/14 |
主分类号 |
C30B33/08 |
代理机构 |
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