| 摘要 |
A magnetic memory device capable of preventing complication of the structure of an amplifier (sense amplifier) and enabling high-speed reading is provided. In this magnetic memory device, a memory cell is formed by a pair of first and second storage elements exhibiting a ferromagnetic tunnel effect and a pair of first and second transistors while an amplifier detects potential difference between a bit line and an inverted bit line connected to the pair of first and second storage elements. Thus, data can be readily read. Further, the value of a small current flowing to the bit line may not be detected dissimilarly to a case of forming the memory cell by a storage element exhibiting a ferromagnetic tunnel effect and a transistor. Consequently, the structure of the amplifier is not complicated. Further, no amplifier having a complicated structure may be employed, whereby high-speed reading is enabled.
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