| 摘要 |
The present invention provides a method of power IC inspection to inspect whether an electrically-failed portion of power ICs results from photo resist peeling before or during source implantation. First, the metal layers on the power ICs are removed by the conventional etching process, and then the dielectric layers on the power ICs are removed by the conventional etching process. Finally, the semiconductor substrate is put into an acid solution containing chromium (Cr), so that a close contour is shown at each of the power ICs whose photo resist didn't peel during photolithography process and after source implantation.
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