| 摘要 |
PURPOSE: A method for fabricating a metal contact of a semiconductor device is provided to reduce resistance of a bit line, by using TiCl4-Ti as a barrier metal and a plugging material such that TiCl4-Ti has excellent step coverage and low resistivity. CONSTITUTION: An insulation layer is formed on a semiconductor substrate(21) where a predetermined process is completed. The insulation layer is selectively etched to form a contact hole. The first TiCl4-Ti(27) and IMP-TiN(28) as the barrier metal are sequentially formed on the insulation layer including the contact hole. The second TiCl4-Ti(30) is formed on the IMP-TiN to plug the contact hole. A metal layer as an interconnection layer is formed on the TiCl4-Ti by a sputtering process.
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