发明名称 Ion implanter for implantation of ions into substrates e.g. semiconductor wafers in electronic device mfr.
摘要 The implanter includes a deceleration lens assembly (9) located between s mass selection flight tube (27) and a substrate holder (11). The lens includes a first electrode (65) at the substrate potential, a second electrode (60) at the flight tube potential and a field electrode (61) between the two at a negative potential to provide focusing. The axial spacing (a) in the beam direction between the two electrodes (65,60) is less than the smallest transverse dimension of the aperture (63) of the field electrode. The lens assembly may be mounted directly opposite the outlet (83) from the process chamber to the vacuum pump to maximise evacuation efficiency.
申请公布号 DE19681168(C2) 申请公布日期 2002.05.08
申请号 DE19961081168 申请日期 1996.11.08
申请人 APPLIED MATERIALS, INC.;INTEL CORP., SANTA CLARA 发明人 ENGLAND, JONATHAN GERALD;ADIBI, BABAK;TAYLOR, MITCHELL C.
分类号 H01J37/30;H01J37/317;(IPC1-7):H01J37/317 主分类号 H01J37/30
代理机构 代理人
主权项
地址