SUB-WORD LINE DRIVING CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A sub-word line driving circuit of a semiconductor memory device is provided, which reduces a test time. CONSTITUTION: The semiconductor memory device includes at least one main word line(WLE), sub-word lines(WL) corresponding to the main word line, and sub-word line drivers(SWD) connected to the main word line in common and connected to correspond to the sub-word lines respectively. Each sub-word line driver drives a corresponding sub-word line with a boosting voltage during a test operation by which a corresponding sub-word line selection signal(PXIj) is activated before the above corresponding main word line is activated.