发明名称 Semiconductor apparatus and method for producing the same
摘要 This invention provides a semiconductor apparatus in which the height of the projected electrode (4) formed on the semiconductor element (1) is deformed plastically so as to unify the distance of the protruding surface of the projected electrode (4) and the surface of the electrode terminal (7) at the side of the circuit substrate (5), and the semiconductor element and the circuit substrate are connected electrically with reliability. This invention also provides a method for producing the semiconductor apparatus. After the semiconductor element (1) is positioned on the predetermined part of the circuit substrate (5), the projected electrode (4) is deformed plastically by pushing the semiconductor element (1) from the back and the height of the projected electrode (4) is processed appropriately. According to the method for producing the semiconductor apparatus, even if there is irregularity of the height of the surface of the electrode terminal (7) formed on the circuit substrate (5) which connects with the semiconductor element (1), the semiconductor element (1) and the circuit substrate (5) can be connected electrically with reliability. <IMAGE>
申请公布号 EP1191578(A3) 申请公布日期 2002.05.08
申请号 EP20010129307 申请日期 1997.03.05
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人
分类号 H01L21/56;H01L21/60 主分类号 H01L21/56
代理机构 代理人
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