| 摘要 |
PURPOSE: A ferroelectric RAM device is provided, which prevents non-selected plate lines from being boosted by peripheral signals. CONSTITUTION: The ferroelectric RAM device includes a main word line(MWL0), and four sub-word line driving and decoding circuits are connected to the main word line respectively. Corresponding selection signals(S0-S3) are applied to the four sub-word line driving and decoding circuits, which are connected to corresponding sub-word lines(SWL0-SWL3) respectively. When one of the selection signals is activated, other selection signals are inactivated. That is, when the main world line is selected and a random selection signal is activated, the sub-word line driving and decoding circuit corresponding to the activated selection signal drives the corresponding sub-word line with a word line driving voltage.
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