SEMICONDUCTOR DEVICE HAVING BIT LINE LANDING PAD AND BORDERLESS CONTACT ON BIT LINE STUD WITH LOCALIZED ETCH STOP LAYER FORMED IN VOID REGION AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device having a bit line landing pad and a borderless contact on a bit line stud with a localized etch stop layer formed in a void region is provided to prevent over-etch, a deteriorated profile and defective step coverage and to reduce a bit defect caused by a contact, by forming etch stop layer pads in the upper region of a stud. CONSTITUTION: The first insulation layer(202) is formed on a substrate(200). The second insulation layer(302) is formed on the first insulation layer. The stud penetrates the first and second insulation layers. The third insulation layer(204) is formed on the uppermost portion of the stud. The first pad is composed of an etch stop layer formed on the stud and under the third insulation layer, formed in the void region made after a part of the second insulation layer is eliminated.