发明名称 Voltage level shifter with high impedance tri-state output and method of operation
摘要 There is disclosed a voltage level shifter that receives an input signal having a maximum Logic 1 value of VDD and produces an output signal having a maximum Logic 1 value of VDDI/O, where VDDI/O is greater than VDD. The voltage level shifter comprises: 1) a first circuit branch comprising A) a first p-type transistor having a source coupled to a first power supply having a level of VDDI/O and B) a first n-type transistor having a source coupled to ground, a drain coupled to a drain of the first p-type transistor, and a gate coupled to the input data signal; and 2) a second circuit branch comprising A) a second p-type transistor having a source coupled to the first power supply and a gate coupled to a drain of the first n-type transistor and B) a second n-type transistor having a source coupled to ground, a drain coupled to i) a drain of the second p-type transistor and ii) a gate of the first p-type transistor, and a gate coupled to an inverted copy of the input data signal, wherein a drain current of the first p-type transistor is larger than a drain current of the second p-type transistor for the same gate-to-source voltage, such that the first p-type transistor turns on faster than the second p-type transistor if the first power supply is powered up to VDDI/O when the first and second n-type transistors are off.
申请公布号 US6384631(B1) 申请公布日期 2002.05.07
申请号 US20010844183 申请日期 2001.04.27
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 WERT JOSEPH D.;BALLACHINO WILLIAM E.
分类号 H03K19/0185;(IPC1-7):H03K19/094 主分类号 H03K19/0185
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