发明名称 Memory test circuit
摘要 A memory test circuit having access control circuits (11 and 12, or 21 and 22, or 31 and 32) recognizes a first memory circuit (101) and a second memory circuit (102), as one continuous memory, incorporated in a semiconductor processing device based on addresses and control commands provided from an external device. The memory test circuit then executes a memory test operation for the first and second memory circuits (101 and 102) continuously.
申请公布号 US6385746(B1) 申请公布日期 2002.05.07
申请号 US19990413196 申请日期 1999.10.05
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TATSUMI TAKASHI
分类号 G06F12/16;G11C29/26;(IPC1-7):G11C29/00 主分类号 G06F12/16
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