发明名称 Coating film forming apparatus and coating film forming method
摘要 A coating area of wafer W is divided into, for example, three regions. The wafer W and/or a supply nozzle are driven in a predetermined coating direction and/or a coating direction such that coating start positions of the adjacent divided regions are not next to each other and/or the coating is not continuously performed in order of a coating end position and a coating start position when the coating end position of one region of the adjacent divided regions and the coating start position of the other region are adjacent to each other, whereby forming a liquid film of a resist liquid for each divided region of the surface of wafer W. As a result, a phenomenon, in which the resist liquid is drawn to the coating start position, so as to increase the film thickness of this portion, occurs in only the corresponding region. Resultantly, uniformity of an inner surface of the film thickness can be improved.
申请公布号 US6383948(B1) 申请公布日期 2002.05.07
申请号 US20000734922 申请日期 2000.12.13
申请人 TOKYO ELECTRON LIMITED 发明人 KITANO TAKAHIRO;MORIKAWA MASATERU;ESAKI YUKIHIKO;ISHIZAKA NOBUKAZU;KOGA NORIHISA;TAKESHITA KAZUHIRO;OOKUMA HIROFUMI;AKIMOTO MASAMI
分类号 H01L21/027;B05C5/02;H01L21/00;(IPC1-7):H01L21/31;H01L21/469;B05C13/02;B05B5/025 主分类号 H01L21/027
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